unisonic technologies co., ltd utd3055 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r502-460.a power mosfet 12 amps, 60 volts n?channel dpak ? description the utc utd3055 is an n-channel power mosfet, and it can withstand high energy in the avalanche and commutation modes. the utc utd3055 is needed for applications, such as power supplies, converters and power motor controls which require low voltage and high speed switching. these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ? features * i dss and v ds(on) specified at elevated temperature * avalanche energy specified ? symbol gate drain source ? ordering information pin assignment ordering number package 1 2 3 packing UTD3055G-TN3-R to-252 g d s tape reel note: d; drain, g: gate, s: source
utd3055 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-460.a ? absolute maximum ratings (t c = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v drain-gate voltage (r gs =1.0m ? ) v dgr 60 v continuous v gs 20 v gate-source voltage non-repetitive (t p 10s) v gsm 25 v continuous @ 25c i d 12 a continuous @ 100c i d 7.3 a drain current single pulse (t p 10s) i dm 37 a single pulse drain?to?source avalanche energy ? starting t j = 25c (v dd = 25 v, v gs = 10 v, i l = 12 a, l = 1.0 mh, r g = 25 ? ) e as 72 mj total power dissipation @ 25c 48 w total power dissipation @ t a = 25c, when mounted to minimum recommended pad size p d 1.75 w operating junction temperature t j -55~175 c storage temperature t stg -55~175 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 100 w/c junction to case jc 3.13 w/c ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics i d =250a, v gs =0v 60 v drain-source breakdown voltage bv dss temperature coefficient (positive) 65 mv/c v ds =60v, v gs =0v 10 drain-source leakage current i dss v ds =60v, v gs =0v, t j =150c 100 a gate- source leakage current i gss v gs =20v, v ds =0 100 na on characteristics (note) v ds =v gs , i d =250a 2.0 2.7 4.0 v gate threshold voltage v gs(th) temperature coefficient (negative) 5.4 mv/c static drain-source on-state resistance r ds(on) v gs =10v, i d =6.0a 0.10 0.15 ? i d =12a 1.3 2.2 drain-source on-votlage (v gs =10v) v ds(on) i d =6.0a, t j =150c 1.9 v forward transconductance g fs v ds =7.0v, i d =6.0a 4.0 5.0 s dynamic parameters input capacitance c iss 410 500 pf output capacitance c oss 130 180 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 25 50 pf note: pulse test: pulse width 300s, duty cycle 2%.
utd3055 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-460.a ? electrical characteristics (cont.) parameter symbol test conditions min typ max unit switching parameters (note 2) q t 12.2 17 nc q 1 3.2 nc q 2 5.2 nc gate charge q 3 v gs =10v, v ds =48v, i d =12a 5.5 nc turn-on delay time t d(on) 7.0 10 ns rise time t r 34 60 ns turn-off delay time t d(off) 17 30 ns fall-time t f v dd =30v, v gs =10v, i d =12a, r g =9.1 ? 18 50 ns source- drain diode ratings and characteristics i s =12a, v gs =0v 1.0 1.6 drain-source diode forward voltage (note 1) v sd i s =12a, v gs =0v, t j =150c 0.91 v t rr 56 ns t a 40 ns reverse recovery time t b 16 ns reverse recovery charge q rr i s =12a, v gs =0v, dis/dt=100a/s 0.128 c internal package inductance internal drain inductance (measured from the drain lead 0.25?? from package to center of die) l d 4.5 nh internal source inductance (measured from the source lead 0.25, from package to source bond pad) l s 7.5 nh note: 1. pulse test: pulse width 300s, duty cycle 2%. 2. switching characteristics are indepen dent of operating junction temperature.
utd3055 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-460.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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